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| 2N5550 / 2N5551 2N5550 / 2N5551 NPN Version 2006-06-17 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause 18 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 9 Grenzwerte (TA = 25C) 2N5550 140 V 160 V 6V 625 mW 1) 600 mA -55...+150C -55...+150C 2N5551 160 V 180 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 2) VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 2N5550 hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat 60 60 20 80 80 30 - - - - Kennwerte (Tj = 25C) Typ. - - - - - - - - - - Max. - 250 - - 250 - 0.15 V 0.15 V 0.25 V 0.20 V 2N5551 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) 2N5550 2N5551 2N5550 2N5551 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 2N5550 / 2N5551 Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCB = 100 V, (E open) VCB = 120 V, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k, f = 30 Hz ... 15 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2N5550 2N5551 F F RthA - - - - < 200 K/W 1) 2N5400 / 2N5401 10 dB 8 dB CCBO - - 6 pF fT 100 MHz - 300 MHz IEBO - - 50 nA 2N5550 2N5551 VBEsat VBEsat VBEsat VBEsat ICBO ICBO - - - - - - - - - - - - 1.0 V 1.2 V 1.0 V 1.0 V 100 nA 50 nA Kennwerte (Tj = 25C) Typ. Max. Collector-Base cutoff current - Kollektor-Base-Reststrom 2N5550 2N5551 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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